m mbt2907lt1 m mbt2907alt1 sot?23 general purpose transistor pnp silicon maximum ratings rating symbol 2907 2907a unit collector?emitter voltage v ceo ?40 ?60 vdc collector?base voltage v cbo ?60 vdc emitter?base voltage v ebo ?5.0 vdc collector current ? continuous i c ?600 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c device marking m mbt2907l t1 = m2b, mmbt2907a l t1 = 2f electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage(3) v (br)ceo vdc (i c = ?10 madc, i b = 0) m mbt2907 ?40 ? m mbt2907a ?60 ? collector?emitter breakdown voltage(i c = ?10 adc, i e = 0) v (br)cbo ?60 ? vdc emitter?base breakdown voltage(i e = ?10 adc, i c = 0) v (br)ebo ?5.0 ? vdc collector cutoff current( v cb = ?30vdc, i be(off) = ?0.5vdc) i cex ? ?50 nadc collector cutoff current i cbo adc ( v cb = ?50vdc, i e = 0) m mbt2907 ? ?0.020 m mbt2907a ? ?0.010 ( v cb = ?50vdc, i e = 0, t a =125c ) m mbt2907 ? ?20 m mbt2907a ? ?10 base current( v ce = ?30vdc, v eb(off) = ?0.5vdc ) i b ? ?50 nadc 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. pulse test: pulse width < 300 s, duty cycle < 2.0%. value 2 emitter 3 collector 1 base ? rohs product for packing code suffix "g", weight : 0.008g halogen free product for packing code suffix "h" . ?
m mbt2907 l t1 m mbt2907alt1 electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain h fe ?? (i c = ?0.1madc, v ce = ?10 vdc) m mbt2907 35 ?? m mbt2907a 75 ?? (i c =?1.0madc, v ce = ?10 vdc) m mbt2907 50 ?? m mbt2907a 100 ?? (i c = ?10 madc, v ce = ?10vdc) m mbt2907 75 ?? m mbt2907a 100 ?? (i c = ?150madc, v ce =?10 vdc)(3) m mbt2907 ?? ?? m mbt2907a 100 300 (i c = ?500madc, v ce =?10 vdc)(3) m mbt2907 30 ?? m mbt2907a 50 ?? collector?emitter saturation voltage(3) v ce(sat) vdc (i c = ?150madc, i b = ?15 madc) ?? ?0.4 (i c = ?500 madc, i b = ?50 madc) ?? ?1.6 base?emitter saturation voltage(3) v be(sat) vdc (i c = ?150madc, i b = ?15 madc) ?? ?1.3 (i c = ?500madc, i b = ?50 madc) ?? ?2.6 small?signal characteristics current?gain ? bandwidth product(3),(4) f t 200 ?? mhz (i c = ?50madc, v ce = ?20vdc, f = 100mhz) output capacitance (v cb = ?10 vdc, i e = 0, f = 1.0 mhz) c obo ?? 8.0 pf input capacitance c ibo ?? 30 pf (v eb = ?2.0vdc, i c = 0, f = 1.0 mhz) switching characteristics turn?on time (v cc = ?30 vdc, t on ?45 delay time i c = ?150 madc, i b1 = ?15 madc) t d ?10ns rise time t r ?40 fall time (v cc = ?6.0 vdc, t f ?30 storage time i c = ?150 madc,i b1 = i b2 = 15 madc) t s ?80ns turn?off time t off ? 100 3. pulse test: pulse width < 300 s, duty cycle < 2.0%. 4. f t is defined as the frequency at which |h f e | extrapolates to unity. figure 1. delay and rise time test circuit 0 0 ?16 v 200 ns 50 1.0 k 200 ?30 v to oscilloscope rise time < 5.0 ns +15 v ?6.0 v 1.0 k 37 50 1n916 1.0 k 200 ns ?30 v to oscilloscope rise time < 5.0 ns input z o = 50 ? prf = 150 pps rise time < 2.0 ns p.w. < 200 ns input z o = 50 ? prf = 150 pps rise time < 2.0 ns p.w. < 200 ns figure 2. storage and fall time test circuit
i c , collector curren (ma) figure 3. dc current gain m mbt2907lt1 m mbt2907alt1 t j = 125c h fe , normalized current gain v ce , collector? emitter voltage (volts) i c = ?1.0 ma t r i b , base current (ma) figure 4. collector saturation region i c , collector current figure 5. turn?on time i c , collector current (ma) figure 6. turn?off time t, time (ns) t, time (ns) 25c ?55c v ce = ?1.0 v v ce = ?10 v ?10 ma ?100 ma ?500 ma 2.0 v t d @ v be(off) = 0 v v cc = ?30 v i c /i b = 10 t j = 25c t f t ? s = t s ? 1/8 t f v cc = ?30 v i c /i b = 10 i b1 = i b2 t j = 25c ?0.005?0.01 ?0.02 ?0.03 ?0.05 ?0.7 ?0.1 ?0.2 ?0.3 ?0.5 ?0.7 ?1.0 ?2.0 ?3.0 ?5.0 ?7.0 ?10 ?20 ?30 ?50 ?0.1 ?0.2 ?0.3 ?0.5 ?0.7 ?1.0 ?2.0 ?3.0 ?5.0 ?7.0 ?10 ?20 ?30 ?50 ?70 ?100 ?200 ?300 ?500 3.0 2.0 1.0 0.7 0.5 0.3 0.2 ?1.0 ?0.8 ?0.6 ?0.4 ?0.2 0 ?5.0?7.0 ?10 ?20 ?30 ?50 ?70 ?100 ?200 ?300 ?500 300 200 100 70 50 30 20 10 7.0 5.0 3.0 ?5.0?7.0 ?10 ?20 ?30 ?50 ?70 ?100 ?200 ?300 ?500 300 200 100 70 50 30 20 10 7.0 5.0 3.0 typical characteristics
m mbt2907lt1 m mbt2907alt1 c eb typical small?signal characteristics noise figure v ce = 10 vdc, t a = 2 5 c nf, noise figure (db) f=1.0 khz 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k i c = ?1.0 ma, r s = 430 ? ?500 a, r s = 560 ? ?50 a, r s = 2.7 k ? ?100 a, r s = 1.6 k ? f, frequency (khz) figure 7. frequency effects r s , source resistance ( ? ) figure 8. source resistance effects reverse voltage (volts) figure 9. capacitances i c , collector current (ma) figure 10. current?gain ? bandwidth product i c , collector current (ma) figure 11. ?on? voltage i c , collector current (ma) figure 12. temperature coefficients t j = 25c f t , current? gain ? bandwidth product (mhz) coefficient (mv/ c) r vb for v be i c = ?50 a ?100 a ?500 a ?1.0 ma r s =optimum source resistance ?0.1 ?0.2 ?0.3 ?0.5 ?1.0 ?2.0 ?3.0 ?5.0 ?10 ?20 ?30 ?1.0 ?2.0 ?5.0 ?10 ?20 ?50 ?100 ?200 ?500 ?1000 ?0.1 ?0.2 ?0.5 ?1.0 ?2.0 ?5.0 ?10 ?20 ?50 ?100 ?200 ?500 +0.5 0 ?0.5 ? 1.0 ?1.5 ?2.0 ?2.5 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 10 8.0 6.0 4.0 2.0 0 10 8.0 6.0 4.0 2.0 0 nf, noise figure (db) c cb 30 20 10 7.0 5.0 3.0 2.0 c, capacitance(pf) 400 300 200 100 80 60 40 30 20 v ce =?20 v t j = 25c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = ?10 v r vc for v ce(sat) ?0.1 ?0.2 ?0.5 ?1.0 ?2.0 ?5.0 ?10 ?20 ?50 ?100 ?200 ?500 ?1.0 ?0.8 ?0.6 ? 0.4 ?0.2 0 v, voltage (volts)
d j k l a c b s h g v 1 2 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 n o t es : 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. i nch es m i ll i m e t e r s d i m m i n m a x m i n m a x a 0 . 1102 0 . 1197 2 . 80 3 . 04 b 0 . 0472 0 . 0551 1 . 20 1 . 40 c 0 . 0350 0 . 0440 0 . 89 1 . 11 d 0 . 0150 0 . 0200 0 . 37 0 . 50 g 0 . 0701 0 . 0807 1 . 78 2 . 04 h 0 . 0005 0 . 0040 0 . 013 0 . 100 j 0 . 0034 0 . 0070 0 . 085 0 . 177 k 0 . 0 1 4 0 0 . 0 2 85 0 . 35 0 . 6 9 l 0 . 0 350 0 . 0 401 0 . 89 1 . 02 s 0 . 0 830 0 . 1 039 2 . 10 2 . 64 v 0 . 0177 0 . 0236 0 . 45 0 . 60 p i n 1 . base 2 . e m i tt e r 3 . c o ll e c t o r 0.031 0.8 sot-23 3 m mbt2907lt1 m mbt2907alt1
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